Invention Application
- Patent Title: PHOTORESIST COMPOSITION AND METHOD OF FABRICATING THIN FILM TRANSISTOR SUBSTRATE
- Patent Title (中): 光电组合物和薄膜晶体管基板的制造方法
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Application No.: US12620988Application Date: 2009-11-18
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Publication No.: US20100167476A1Publication Date: 2010-07-01
- Inventor: Sang-Hyun Yun , Wook-Seok Jeon , Jung-In Park , Hi-Kuk Lee , Byung-Uk Kim , Dong-Min Kim , Seung-Ki Kim , Ja-Hun Byeon
- Applicant: Sang-Hyun Yun , Wook-Seok Jeon , Jung-In Park , Hi-Kuk Lee , Byung-Uk Kim , Dong-Min Kim , Seung-Ki Kim , Ja-Hun Byeon
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2008-0135908 20081229
- Main IPC: H01L21/336
- IPC: H01L21/336 ; G03F7/004
Abstract:
The present invention relates to a photoresist composition for digital exposure and a method of fabricating a thin film transistor substrate. The photoresist composition for digital exposure includes a binder resin including a novolak resin and a compound represented by the chemical formula (1), a photosensitizer including a diazide-based compound, and a solvent: wherein R1-R9 each include a hydrogen atom, an alkyl group, or a benzyl group, a is an integer from 0 to 10, b is an integer from 0 to 100, and c is an integer from 0 to 10.
Public/Granted literature
- US08790859B2 Photoresist composition and method of fabricating thin film transistor substrate Public/Granted day:2014-07-29
Information query
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