发明申请
- 专利标题: Novel hard bias design for extra high density recording
- 专利标题(中): 用于超高密度记录的新型硬偏置设计
-
申请号: US12660908申请日: 2010-03-05
-
公开(公告)号: US20100172053A1公开(公告)日: 2010-07-08
- 发明人: Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
- 申请人: Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
- 专利权人: Headway Technologies, Inc.
- 当前专利权人: Headway Technologies, Inc.
- 主分类号: G11B5/187
- IPC分类号: G11B5/187 ; B05D1/36
摘要:
A hard bias structure for biasing a free layer in a MR element within a read head is comprised of a composite hard bias layer having a Co78.6Cr5.2Pt16.2/Co65Cr15Pt20 configuration. The upper Co65Cr15Pt20 layer has a larger Hc value and a thickness about 2 to 10 times greater than that of the Co78.6Cr5.2Pt16.2 layer. The hard bias structure may also include a BCC underlayer such as FeCoMo which enhances the magnetic moment of the hard bias structure. Optionally, the thickness of the Co78.6Cr5.2Pt16.2 layer is zero and the Co65Cr15Pt20 layer is formed on the BCC underlayer. The present invention also encompasses a laminated hard bias structure. The Mrt value for the hard bias structure may be optimized by adjusting the thicknesses of the BCC underlayer and CoCrPt layers. As a result, a larger process window is realized and lower asymmetry output during a read operation is achieved.
公开/授权文献
- US08107201B2 Hard bias design for extra high density recording 公开/授权日:2012-01-31
信息查询
IPC分类: