发明申请
US20100174503A1 Monitoring NFET/PFET Skew in Complementary Metal Oxide Semiconductor Devices
审中-公开
监测互补金属氧化物半导体器件中的NFET / PFET偏移
- 专利标题: Monitoring NFET/PFET Skew in Complementary Metal Oxide Semiconductor Devices
- 专利标题(中): 监测互补金属氧化物半导体器件中的NFET / PFET偏移
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申请号: US12349698申请日: 2009-01-07
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公开(公告)号: US20100174503A1公开(公告)日: 2010-07-08
- 发明人: Bruce Balch , Anthony Wayne Fazekas , Mark C.H. Lamorey , Jeffrey H. Oppold , Joseph James Oler, JR. , Chirstopher Daniel Parkinson
- 申请人: Bruce Balch , Anthony Wayne Fazekas , Mark C.H. Lamorey , Jeffrey H. Oppold , Joseph James Oler, JR. , Chirstopher Daniel Parkinson
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: G01R29/02
- IPC分类号: G01R29/02 ; G21C17/00 ; H03K3/03
摘要:
An apparatus for directly measuring performance offset of NFET transistors with respect to PFET transistors in CMOS device processing includes a ring oscillator whose frequency is used to measure random across chip variations, as well as correlated across chip variations; a balanced inverter having a input driven by the ring oscillator, wherein the balanced inverter is designed to be formed such that a current drive capability of one or more NFET devices of the inverter is substantially equal to a current drive capability of one or more PFET devices of the inverter at a given operating temperature; and a capacitor coupled to an output of the inverter, with a voltage across the capacitor indicative of whether a skew exists between NFET device performance and PFET device performance.