发明申请
- 专利标题: ION BEAM PROCESSING APPARATUS
- 专利标题(中): 离子束加工装置
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申请号: US12731910申请日: 2010-03-25
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公开(公告)号: US20100176297A1公开(公告)日: 2010-07-15
- 发明人: Hiroyasu Shichi , Satoshi Tomimatsu , Noriyuki Kaneoka , Kaoru Umemura , Koji Ishiguro
- 申请人: Hiroyasu Shichi , Satoshi Tomimatsu , Noriyuki Kaneoka , Kaoru Umemura , Koji Ishiguro
- 优先权: JP2006-072600 20060316
- 主分类号: H01J37/26
- IPC分类号: H01J37/26 ; G01N23/22
摘要:
An ion beam processing apparatus includes an ion beam irradiation optical system that irradiate a rectangular ion beam to a sample held on a first sample stage, an electron beam irradiation optical system that irradiates an electron beam to the sample, and a second sample stage on which a test piece, extracted from the sample by a probe, is mounted. An angle of irradiation of the ion beam can be tilted by rotating the second sample stage about a tilting axis. A controller controls the width of skew of an intensity profile representing an edge of the rectangular ion beam in a direction perpendicular to a first direction in which the tilting axis of the second sample stage is projected on the second sample stage surface so that the width will be smaller than the width of skew of an intensity profile representing another edge of the ion beam in a direction parallel to the first direction.
公开/授权文献
- US08431891B2 Dual beam apparatus with tilting sample stage 公开/授权日:2013-04-30
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