发明申请
- 专利标题： VARIABLE RESISTANCE ELEMENT AND SEMICONDUCTOR DEVICE PROVIDED WITH THE SAME
- 专利标题（中）： 可变电阻元件和半导体器件
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申请号： US12602933申请日： 2008-04-16
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公开(公告)号： US20100176363A1公开(公告)日： 2010-07-15
- 发明人: Kensuke Takahashi , Takashi Nakagawa
- 申请人： Kensuke Takahashi , Takashi Nakagawa
- 优先权： JP2007-147927 20070604
- 国际申请： PCT/JP2008/057393 WO 20080416
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
A variable resistance element includes: a first electrode; a variable resistance material layer formed on the first electrode; and a second electrode formed on this variable resistance material layer. The variable resistance material layer is made of an uncrystallized material including a transition metal oxide, which is an oxide of a transition metal M1, the transition metal oxide containing an oxide of a nontransition metal element M2.
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