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发明申请
US20100176395A1 CMOS THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME AND ORGANIC LIGHT EMITTING DISPLAY DEVICE HAVING THE SAME 有权
CMOS薄膜晶体管，其制造方法和有机发光显示装置

CMOS THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME AND ORGANIC LIGHT EMITTING DISPLAY DEVICE HAVING THE SAME
摘要：
A CMOS thin film transistor arrangement including a PMOS poly-silicon thin film transistor having a top gate configuration and a NMOS oxide thin film transistor having an inverted staggered bottom gate configuration where both transistors share the same gate electrode. The shared gate electrode is used as a doping or implantation mask in the formation of the source and drain regions of the poly-silicon transistor.
摘要（中）：

一种CMOS薄膜晶体管装置，其包括具有顶栅配置的PMOS多晶硅薄膜晶体管和具有倒置交错底栅结构的NMOS氧化物薄膜晶体管，其中两个晶体管共享相同的栅电极。 在形成多晶硅晶体管的源极和漏极区域中，共享栅电极用作掺杂或注入掩模。

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