发明申请
US20100176432A1 Memory Cells, Methods Of Forming Dielectric Materials, And Methods Of Forming Memory Cells
有权
记忆细胞，形成介电材料的方法和形成记忆细胞的方法
- 专利标题： Memory Cells, Methods Of Forming Dielectric Materials, And Methods Of Forming Memory Cells
- 专利标题（中）： 记忆细胞，形成介电材料的方法和形成记忆细胞的方法
-
申请号： US12351099申请日： 2009-01-09
-
公开(公告)号： US20100176432A1公开(公告)日： 2010-07-15
- 发明人: D.V. Nirmal Ramaswamy , Noel Rocklein , Kyu S. Min
- 申请人： D.V. Nirmal Ramaswamy , Noel Rocklein , Kyu S. Min
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/00 ; H01L21/3205
摘要：
Some embodiments include memory cells. The memory cells may include a tunnel dielectric material, a charge-retaining region over the tunnel dielectric material, crystalline ultra-high k dielectric material over the charge-retaining region, and a control gate material over the crystalline ultra-high k dielectric material. Additionally, the memory cells may include an amorphous region between the charge-retaining region and the crystalline ultra-high k dielectric material, and/or may include an amorphous region between the crystalline ultra-high k dielectric material and the control gate material. Some embodiments include methods of forming memory cells which contain an amorphous region between a charge-retaining region and a crystalline ultra-high k dielectric material, and/or which contain an amorphous region between a crystalline ultra-high k dielectric material and a control gate material.
公开/授权文献
信息查询
IPC分类:
