发明申请
- 专利标题： NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 非挥发性半导体存储器件及其制造方法
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申请号： US12602154申请日： 2007-09-10
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公开(公告)号： US20100176439A1公开(公告)日： 2010-07-15
- 发明人: Yoshiki Yonamoto
- 申请人： Yoshiki Yonamoto
- 国际申请： PCT/JP2007/067570 WO 20070910
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/336
摘要：
The charge retention characteristics of a non-volatile memory, particularly, a MONOS-type non-volatile memory is improved. In a non-volatile memory cell including a tunnel silicon oxide film (107), a silicon nitride film (104) serving as a charge storage film, a silicon oxide film (105), and a gate electrode (108) which are sequentially formed on a semiconductor substrate, the tunnel silicon oxide film (107) has a stacked structure of a silicon oxynitride film (102) and a silicon oxide film (103). Herein, it is configured such that a density of nitrogen atoms contained in the silicon oxynitride film (102) decreases as a distance from an interface with the semiconductor substrate increases in a film-thickness direction of the silicon oxynitride film (102).
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