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发明申请
US20100177548A1 MULTILEVEL ONE-TIME PROGRAMMABLE MEMORY DEVICE 有权
多功能一次可编程存储器件

  • 专利标题： MULTILEVEL ONE-TIME PROGRAMMABLE MEMORY DEVICE
  • 专利标题（中）： 多功能一次可编程存储器件
  • 申请号： US12634166
    申请日： 2009-12-09
  • 公开(公告)号： US20100177548A1
    公开(公告)日： 2010-07-15
  • 发明人: Dong-ki MIN , Hoo-sang OH
  • 申请人： Dong-ki MIN , Hoo-sang OH
  • 优先权： KR2009-0002975 20090114
  • 主分类号： G11C17/00
  • IPC分类号： G11C17/00 ;  G11C7/00
MULTILEVEL ONE-TIME PROGRAMMABLE MEMORY DEVICE
摘要：
A multilevel one-time programmable memory device includes a plurality of memory cells, wherein each of the plurality of memory cells includes: a first electrode to which a first voltage is applied, a second electrode to which a second voltage is applied and a plurality of fuse lines performing a fusing operation according to a voltage difference between the first electrode and the second electrode. The plurality of fuse lines are connected to each other between the first electrode and the second electrode. In addition, at least one of the first electrode and the second electrode is formed such that the first electrode and the second electrode have different valid line lengths from each other therebetween so that the plurality of fuse lines have different resistances from each other.
摘要（中）：

多级一次可编程存储器件包括多个存储器单元，其中多个存储器单元中的每一个包括：施加第一电压的第一电极，施加第二电压的第二电极， 熔丝线根据第一电极和第二电极之间的电压差来执行定影操作。 多个熔丝线在第一电极和第二电极之间彼此连接。 此外，第一电极和第二电极中的至少一个形成为使得第一电极和第二电极之间的有效线长度彼此不同，使得多个熔丝线彼此具有不同的电阻。

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