发明申请
- 专利标题： NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 氮化物半导体器件及其制造方法
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申请号： US12608625申请日： 2009-10-29
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公开(公告)号： US20100178756A1公开(公告)日： 2010-07-15
- 发明人: Toshiyuki TAKIZAWA , Jun Shimizu , Tetsuzo Ueda
- 申请人： Toshiyuki TAKIZAWA , Jun Shimizu , Tetsuzo Ueda
- 申请人地址： JP Osaka
- 专利权人： PANASONIC CORPORATION
- 当前专利权人： PANASONIC CORPORATION
- 当前专利权人地址： JP Osaka
- 优先权： JP2006-017193 20060126; JP2006-023029 20060131
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A nitride semiconductor device includes: a substrate having a principal surface; a first nitride semiconductor layer formed on the principal surface of the substrate and includes one or more convex portions whose side surfaces are vertical to the principal surface; and a second nitride semiconductor layer selectively grown on the side surfaces of the one or more convex portions of the first nitride semiconductor layer.
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