发明申请
- 专利标题: LASER LIFT-OFF WITH IMPROVED LIGHT EXTRACTION
- 专利标题(中): 激光提升与改进的光提取
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申请号: US12304533申请日: 2006-07-11
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公开(公告)号: US20100181584A1公开(公告)日: 2010-07-22
- 发明人: Xiang Gao , Hari S. Venugopalan , Michael Sackrison , Ivan Eliashevich
- 申请人: Xiang Gao , Hari S. Venugopalan , Michael Sackrison , Ivan Eliashevich
- 国际申请: PCT/US06/27205 WO 20060711
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L31/00
摘要:
A light emitting device includes a stack of semiconductor layers defining a light emitting pn junction and a dielectric layer disposed over the stack of semiconductor layers. The dielectric layer has a refractive index substantially matching a refractive index of the stack of semiconductor layers. The dielectric layer has a principal surface distal from the stack of semiconductor layers. The distal principal surface includes patterning, roughening, or texturing configured to promote extraction of light generated in the stack of semiconductor layers.