发明申请
US20100181584A1 LASER LIFT-OFF WITH IMPROVED LIGHT EXTRACTION 审中-公开
激光提升与改进的光提取

LASER LIFT-OFF WITH IMPROVED LIGHT EXTRACTION
摘要:
A light emitting device includes a stack of semiconductor layers defining a light emitting pn junction and a dielectric layer disposed over the stack of semiconductor layers. The dielectric layer has a refractive index substantially matching a refractive index of the stack of semiconductor layers. The dielectric layer has a principal surface distal from the stack of semiconductor layers. The distal principal surface includes patterning, roughening, or texturing configured to promote extraction of light generated in the stack of semiconductor layers.
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