Invention Application
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
-
Application No.: US12656137Application Date: 2010-01-19
-
Publication No.: US20100181616A1Publication Date: 2010-07-22
- Inventor: Shinobu Takehiro
- Applicant: Shinobu Takehiro
- Applicant Address: JP Tokyo
- Assignee: OKI SEMICONDUCTOR CO., LTD.
- Current Assignee: OKI SEMICONDUCTOR CO., LTD.
- Current Assignee Address: JP Tokyo
- Priority: JP2009-008687 20090119
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A semiconductor device where a plurality of DMOS transistors formed in a distributed manner on a semiconductor substrate can operate without being destroyed and a method of manufacturing the same. The on/off threshold voltage of a DMOS transistor at the innermost position from among three or more DMOS transistors formed in a distributed manner on a semiconductor is greater than the on/off threshold voltage of a DMOS transistor at the outermost position.
Public/Granted literature
Information query
IPC分类:
