发明申请
- 专利标题： Magnetic memory devices and methods of manufacturing such magnetic memory devices
- 专利标题（中）： 磁存储器件和制造这种磁存储器件的方法
-
申请号： US12656145申请日： 2010-01-19
-
公开(公告)号： US20100183902A1公开(公告)日： 2010-07-22
- 发明人: Woojin Kim , Jangeun Lee , Sechung Oh , KyungTae Nam , Dae Kyom Kim , Junho Jeong
- 申请人： Woojin Kim , Jangeun Lee , Sechung Oh , KyungTae Nam , Dae Kyom Kim , Junho Jeong
- 优先权： KR10-2009-0004679 20090120
- 主分类号： G11B5/39
- IPC分类号： G11B5/39
摘要：
A magnetic memory device may include a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer arranged on a substrate. The tunnel barrier layer may include a crystal structure and may be arranged between the first ferromagnetic layer and the second ferromagnetic layer. At least the first ferromagnetic layer may include a first layer in contact with the tunnel barrier layer and a second layer in contact with the first layer, and an orientation of the first layer with respect to the tunnel barrier layer may be greater than an orientation of the second layer with respect to the tunnel barrier layer.