发明申请
- 专利标题: SUBSTRATE SUPPORT WITH GAS INTRODUCTION OPENINGS
- 专利标题(中): 基础支持与气体介绍开幕
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申请号: US12686483申请日: 2010-01-13
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公开(公告)号: US20100184290A1公开(公告)日: 2010-07-22
- 发明人: Sam H. Kim , John M. White , Soo Young Choi , Carl A. Sorensen , Robin L. Tiner , Beom Soo Park
- 申请人: Sam H. Kim , John M. White , Soo Young Choi , Carl A. Sorensen , Robin L. Tiner , Beom Soo Park
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 主分类号: H01L21/28
- IPC分类号: H01L21/28
摘要:
Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.