发明申请
US20100185997A1 TECHNOLOGY MIGRATION FOR INTEGRATED CIRCUITS WITH RADICAL DESIGN RESTRICTIONS
失效
用于具有放射性设计限制的集成电路的技术移动
- 专利标题: TECHNOLOGY MIGRATION FOR INTEGRATED CIRCUITS WITH RADICAL DESIGN RESTRICTIONS
- 专利标题(中): 用于具有放射性设计限制的集成电路的技术移动
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申请号: US12726413申请日: 2010-03-18
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公开(公告)号: US20100185997A1公开(公告)日: 2010-07-22
- 发明人: Robert J. Allen , Cam V. Endicott , Fook-Luen Heng , Jason D. Hibbeler , Kevin W. McCullen , Rani Narayan , Robert F. Walker , Xin Yuan
- 申请人: Robert J. Allen , Cam V. Endicott , Fook-Luen Heng , Jason D. Hibbeler , Kevin W. McCullen , Rani Narayan , Robert F. Walker , Xin Yuan
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: G06F17/50
- IPC分类号: G06F17/50
摘要:
A method, system and program product for migrating an integrated circuit (IC) design from a source technology without radical design restrictions (RDR) to a target technology with RDR, are disclosed. The invention implements a minimum layout perturbation approach that addresses the RDR requirements. The invention also solves the problem of inserting dummy shapes where required, and extending the lengths of the critical shapes and/or the dummy shapes to meet ‘edge coverage’ requirements.
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