发明申请
- 专利标题： PHOTOCONDUCTORS FOR MID-/FAR-IR DETECTION
- 专利标题（中）： 用于中/红外检测的光电子器件
-
申请号： US12359513申请日： 2009-01-26
-
公开(公告)号： US20100187530A1公开(公告)日： 2010-07-29
- 发明人: Juejun Hu , Ning-Ning Feng , Anuradha M. Agarwal , Lionel C. Kimerling
- 申请人： Juejun Hu , Ning-Ning Feng , Anuradha M. Agarwal , Lionel C. Kimerling
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; H01L21/06
摘要：
An infrared photodiode structure is provided. The infrared photodiode structure includes a doped semiconductor layer having ions of certain conductivity. An active photodetecting region is positioned on the doped semiconductor layer for detecting an infrared light signal. The active photodetecting region includes one or more amorphous semiconductor materials so as to allow for high signal-to-noise ratio being achieved by invoking carrier hopping and band conduction, under dark and illuminated conditions.
公开/授权文献
- US08115203B2 Photoconductors for mid-/far-IR detection 公开/授权日：2012-02-14
信息查询
IPC分类:
