发明申请
- 专利标题： SCHOTTKY DIODE
- 专利标题（中）： 肖特基二极管
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申请号： US12359845申请日： 2009-01-26
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公开(公告)号： US20100187577A1公开(公告)日： 2010-07-29
- 发明人: Xin Lin , Daniel J. Blomberg , Jiang-Kai Zuo
- 申请人： Xin Lin , Daniel J. Blomberg , Jiang-Kai Zuo
- 申请人地址： US TX Austin
- 专利权人： FREESCALE SEMICONDUCTOR, INC.
- 当前专利权人： FREESCALE SEMICONDUCTOR, INC.
- 当前专利权人地址： US TX Austin
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/34
摘要：
Improved Schottky diodes (20) with reduced leakage current and improved breakdown voltage are provided by building a JFET (56) into the diode, serially located in the anode-cathode current path (32). The gates of the JFET (56) formed by doped regions (38, 40) placed above and below the diode's current path (32) are coupled to the anode (312) of the diode (20), and the current path (32) passes through the channel region (46) of the JFET (56). Operation is automatic so that as the reverse voltage increases, the JFET (56) channel region (46) pinches off, thereby limiting the leakage current and clamping the voltage across the Schottky junction (50) at a level below the Schottky junction (50) breakdown. Increased reverse voltage can be safely applied until the device eventually breaks down elsewhere. The impact on device area and area efficiency is minimal and the device can be built using a standard fabrication process so that it can be easily integrated into complex ICs.
公开/授权文献
- US07915704B2 Schottky diode 公开/授权日：2011-03-29
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