发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US12692527申请日： 2010-01-22
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公开(公告)号： US20100187604A1公开(公告)日： 2010-07-29
- 发明人: SYOTARO ONO , Wataru Saito , Nana Hatano , Hiroshi Ohta , Miho Watanabe
- 申请人： SYOTARO ONO , Wataru Saito , Nana Hatano , Hiroshi Ohta , Miho Watanabe
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-012610 20090123
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A semiconductor device includes a semiconductor substrate of a first conductivity type, a first semiconductor region of the first conductivity type on the semiconductor substrate, and a plurality of second semiconductor regions of a second conductivity type disposed separately in the first semiconductor region. A difference between a charge quantity expressed by an integral value of a net activated doping concentration in the second semiconductor regions in the surface direction of the semiconductor substrate and a charge quantity expressed by an integral value of a net activated doping concentration in the first semiconductor region in the surface direction of the semiconductor substrate is always a positive quantity and becomes larger from the depth of the first junction plane to a depth of a second junction plane on an opposite side from the first junction plane.
公开/授权文献
- US08159023B2 Semiconductor device 公开/授权日：2012-04-17
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