发明申请
- 专利标题: METHOD OF MANUFACTURING SEMICONDUCTOR LASER DEVICE, SEMICONDUCTOR LASER DEVICE AND LIGHT APPARATUS
- 专利标题(中): 制造半导体激光器件,半导体激光器件和光器件的方法
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申请号: US12693169申请日: 2010-01-25
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公开(公告)号: US20100189146A1公开(公告)日: 2010-07-29
- 发明人: Yasuyuki Bessho , Hiroki Ohbo , Kunio Takeuchi , Seiichi Tokunaga , Yasumitsu Kunoh , Masayuki Hata
- 申请人: Yasuyuki Bessho , Hiroki Ohbo , Kunio Takeuchi , Seiichi Tokunaga , Yasumitsu Kunoh , Masayuki Hata
- 申请人地址: JP Moriguchi-shi
- 专利权人: Sanyo Electric Co., Ltd.
- 当前专利权人: Sanyo Electric Co., Ltd.
- 当前专利权人地址: JP Moriguchi-shi
- 优先权: JP2009-14478 20090126; JP2009-103507 20090422; JP2010-7892 20100118
- 主分类号: H01S5/02
- IPC分类号: H01S5/02 ; H01L33/00
摘要:
A method of manufacturing a semiconductor laser device comprises steps of forming a first semiconductor laser device substrate having first grooves for cleavage on a surface thereof, bonding a second semiconductor laser device substrate onto the surface side having the first grooves and thereafter cleaving the first and second semiconductor laser device substrates along at least the first grooves.
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