发明申请
US20100190301A1 CAVITY CLOSURE PROCESS FOR AT LEAST ONE MICROELECTRONIC DEVICE
有权
用于至少一个微电子设备的密封闭合过程
- 专利标题： CAVITY CLOSURE PROCESS FOR AT LEAST ONE MICROELECTRONIC DEVICE
- 专利标题（中）： 用于至少一个微电子设备的密封闭合过程
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申请号： US12693867申请日： 2010-01-26
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公开(公告)号： US20100190301A1公开(公告)日： 2010-07-29
- 发明人: Gilles DELAPIERRE , Bernard Diem , François Perruchot
- 申请人： Gilles DELAPIERRE , Bernard Diem , François Perruchot
- 申请人地址： FR Paris
- 专利权人： COMMISSARIAT A L'ENERGIE ATOMIQUE
- 当前专利权人： COMMISSARIAT A L'ENERGIE ATOMIQUE
- 当前专利权人地址： FR Paris
- 优先权： FR0950494 20090128
- 主分类号： H01L21/60
- IPC分类号： H01L21/60 ; H01L21/56
摘要：
A process for closure of at least one cavity intended to encapsulate or be part of a microelectronic device, comprising the following steps: a) Producing a cavity in a first substrate comprising a first layer traversed by an opening forming an access to the cavity; b) Producing a portion of bond material around the opening, on a surface of the first layer located on the side opposite the cavity; c) Producing, on a second substrate, a portion of fusible material, with a deposition of the fusible material on the second substrate and the use of a mask; d) Placing the portion of fusible material in contact with the portion of bond material; e) Forming a plug for the opening, which adheres to the portion of bond material, by melting and then solidification of the fusible material; f) Separating the plug and the second substrate.
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