发明申请
- 专利标题： STRUCTURE COMPRISING A GETTER LAYER AND AN ADJUSTING SUBLAYER AND FABRICATION PROCESS
- 专利标题（中）： 结构包括一个入口层和一个调整子层和制造过程
-
申请号： US12679487申请日： 2008-10-09
-
公开(公告)号： US20100193215A1公开(公告)日： 2010-08-05
- 发明人: Xavier Baillin
- 申请人： Xavier Baillin
- 申请人地址： FR Paris
- 专利权人： COMMISSARIAT A L'ENERGIE ATOMIQUE
- 当前专利权人： COMMISSARIAT A L'ENERGIE ATOMIQUE
- 当前专利权人地址： FR Paris
- 优先权： FR0707212 20071015
- 国际申请： PCT/FR2008/001420 WO 20081009
- 主分类号： H05K5/06
- IPC分类号： H05K5/06
摘要：
The structure comprises at least a device, for example a microelectronic chip, and at least a getter arranged in a cavity under a controlled atmosphere delineated by a substrate and a sealing cover. The getter comprises at least one preferably metallic getter layer, and an adjustment sub-layer made from pure metal, situated between the getter layer and the substrate, on which it is formed. The adjustment sub-layer is designed to modulate the activation temperature of the getter layer. The getter layer comprises two elementary getter layers.
公开/授权文献
信息查询
