发明申请
- 专利标题： MAGNETIC DOMAIN WALL RANDOM ACCESS MEMORY
- 专利标题（中）： 磁性域墙随机存取存储器
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申请号： US12671012申请日： 2008-07-07
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公开(公告)号： US20100193890A1公开(公告)日： 2010-08-05
- 发明人: Tetsuhiro Suzuki , Norikazu Ohshima , Shunsuke Fukami , Kiyokazu Nagahara , Nobuyuki Ishiwata
- 申请人： Tetsuhiro Suzuki , Norikazu Ohshima , Shunsuke Fukami , Kiyokazu Nagahara , Nobuyuki Ishiwata
- 优先权： JP2007-202943 20070803
- 国际申请： PCT/JP2008/062277 WO 20080707
- 主分类号： H01L29/82
- IPC分类号： H01L29/82
摘要：
A magnetic random access memory includes: a magnetic recording layer including a ferromagnetic layer and having perpendicular magnetic anisotropy; and a magnetic reading layer provided on the magnetic recording layer and used for reading information. The magnetic recording layer includes: a magnetization switching area having reversible magnetization; a first magnetization pinned area connected to a first boundary of the magnetization switching area and having magnetization whose direction is pinned in a first direction; and a second magnetization pinned area connected to a second boundary of the magnetization switching area and having magnetization whose direction is pinned in a second direction. The magnetic reading layer includes: a magnetic sensing layer whose direction of magnetization changes based on a direction of the magnetization of the magnetization switching area; a nonmagnetic barrier layer provided on the magnetic sensing layer; and a pinned layer provided on the nonmagnetic barrier layer.
公开/授权文献
- US08040724B2 Magnetic domain wall random access memory 公开/授权日：2011-10-18
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