发明申请
- 专利标题： SEMICONDUCTOR MATERIAL MANUFACTURE
- 专利标题（中）： 半导体材料制造
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申请号： US12365734申请日： 2009-02-04
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公开(公告)号： US20100193897A1公开(公告)日： 2010-08-05
- 发明人: Nishant Sinha , Gurtej S. Sandhu , John Smythe
- 申请人： Nishant Sinha , Gurtej S. Sandhu , John Smythe
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/762
摘要：
Electronic apparatus, systems, and methods include a semiconductor layer bonded to a bulk region of a wafer or a substrate, in which the semiconductor layer can be bonded to the bulk region using electromagnetic radiation. Additional apparatus, systems, and methods are disclosed.
公开/授权文献
- US07927975B2 Semiconductor material manufacture 公开/授权日：2011-04-19