发明申请
US20100195231A1 REFLECTION FILM, REFLECTION FILM LAMINATE, LED, ORGANIC EL DISPLAY, AND ORGANIC EL ILLUMINATING INSTRUMENT
有权
反射膜,反射膜层压板,LED,有机EL显示器和有机EL照明仪器
- 专利标题: REFLECTION FILM, REFLECTION FILM LAMINATE, LED, ORGANIC EL DISPLAY, AND ORGANIC EL ILLUMINATING INSTRUMENT
- 专利标题(中): 反射膜,反射膜层压板,LED,有机EL显示器和有机EL照明仪器
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申请号: US12679633申请日: 2008-09-25
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公开(公告)号: US20100195231A1公开(公告)日: 2010-08-05
- 发明人: Jun Suzuki , Toshiki Sato , Takayuki Tsubota , Shinichi Tanifuji
- 申请人: Jun Suzuki , Toshiki Sato , Takayuki Tsubota , Shinichi Tanifuji
- 申请人地址: JP Kobe-shi, Hyogo
- 专利权人: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)
- 当前专利权人: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)
- 当前专利权人地址: JP Kobe-shi, Hyogo
- 优先权: JP2007-247356 20070925; JP2007-262454 20071005; JP2008-168977 20080627
- 国际申请: PCT/JP2008/067336 WO 20080925
- 主分类号: G02B7/182
- IPC分类号: G02B7/182 ; B32B15/04 ; B32B17/06 ; B32B5/00
摘要:
The present invention provides a reflection film, a reflection film laminate which are less likely to undergo agglomeration or sulfidation of an Ag thin film due to heat, and a LED, an organic EL display, and an organic EL illuminating instrument, each including any of these. The reflection film in accordance with the present invention is a reflection film formed on a substrate, characterized by being an Ag alloy film including Ag as a main component, and Bi in an amount of 0.02 atomic percent or more, and further including one or more of V, Ge, and Zn in a total content of 0.02 atomic percent or more, and satisfying the following expression (1): 7×[A]+13×[Bi]≦8 (1) where [A] (atomic percent) denotes the content of one or more of the V, Ge, and Zn, and [Bi] (atomic percent) denotes the content of Bi. Whereas, a reflection film laminate in accordance with the present invention is a reflection film laminate formed on a substrate, characterized by including: a first film comprising an Ag alloy film including Ag as a main component, and Bi in an amount of 0.02 atomic percent or more, and further including one or more of V, Ge, and Zn in a total content of 0.02 atomic percent or more, and satisfying the expression (1); and a second film including a Si oxide formed on the first film.