发明申请
US20100196805A1 MASK AND METHOD TO PATTERN CHROMELESS PHASE LITHOGRAPHY CONTACT HOLE 有权
用于绘制无色相位光刻接触孔的掩模和方法

MASK AND METHOD TO PATTERN CHROMELESS PHASE LITHOGRAPHY CONTACT HOLE
摘要:
A method of making a mask is disclosed. The method includes providing a first and a second mask layers and disposing a first phase shift region on the first mask layer. A second phase shift region is disposed on the second mask layer, wherein the first and second phase shift regions are out of phase. A continuous unit cell is formed in the first phase shift region. The unit cell comprises a center section and distinct extension sections. The extension sections are contiguous to and extend outwards from the center section. The distinct extension sections have a same width as the center section. The second phase shift region is adjacent to the unit cell in the first phase shift region.
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