发明申请
US20100196805A1 MASK AND METHOD TO PATTERN CHROMELESS PHASE LITHOGRAPHY CONTACT HOLE
有权
用于绘制无色相位光刻接触孔的掩模和方法
- 专利标题: MASK AND METHOD TO PATTERN CHROMELESS PHASE LITHOGRAPHY CONTACT HOLE
- 专利标题(中): 用于绘制无色相位光刻接触孔的掩模和方法
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申请号: US12695167申请日: 2010-01-28
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公开(公告)号: US20100196805A1公开(公告)日: 2010-08-05
- 发明人: Sia Kim TAN , Soon Yoeng TAN , Qun Ying LIN , Huey Ming CHONG , Liang Choo HSIA
- 申请人: Sia Kim TAN , Soon Yoeng TAN , Qun Ying LIN , Huey Ming CHONG , Liang Choo HSIA
- 申请人地址: SG Singapore
- 专利权人: CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- 当前专利权人: CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- 当前专利权人地址: SG Singapore
- 主分类号: G03F1/00
- IPC分类号: G03F1/00
摘要:
A method of making a mask is disclosed. The method includes providing a first and a second mask layers and disposing a first phase shift region on the first mask layer. A second phase shift region is disposed on the second mask layer, wherein the first and second phase shift regions are out of phase. A continuous unit cell is formed in the first phase shift region. The unit cell comprises a center section and distinct extension sections. The extension sections are contiguous to and extend outwards from the center section. The distinct extension sections have a same width as the center section. The second phase shift region is adjacent to the unit cell in the first phase shift region.