发明申请
- 专利标题： Forming Phase Change Memory Cell With Microtrenches
- 专利标题（中）： 形成相变存储器细胞与微螺旋
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申请号： US12756392申请日： 2010-04-08
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公开(公告)号： US20100197120A1公开(公告)日： 2010-08-05
- 发明人: Fabio Pellizzer , Charles H. Dennison
- 申请人： Fabio Pellizzer , Charles H. Dennison
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A semiconductor substrate is covered by a dielectric region. The dielectric region accommodates a memory element and a selection element forming a phase change memory cell. The memory element is formed by a resistive element and by a storage region of a phase change material extending on and in contact with the resistive element at a contact area. The selection element is formed by a switching region of chalcogenic material embedded in the dielectric region and belonging to a stack extending on the resistive element and including also the storage region. A mold region extends on top of the resistive element and delimits a trench having a substantially elongated shape. At least one portion of the storage region extends in the trench and defines a phase change memory portion over the contact area.
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