发明申请
US20100200949A1 METHOD FOR TUNING THE THRESHOLD VOLTAGE OF A METAL GATE AND HIGH-K DEVICE
审中-公开
用于调节金属栅极和高K器件的阈值电压的方法
- 专利标题： METHOD FOR TUNING THE THRESHOLD VOLTAGE OF A METAL GATE AND HIGH-K DEVICE
- 专利标题（中）： 用于调节金属栅极和高K器件的阈值电压的方法
-
申请号： US12370024申请日： 2009-02-12
-
公开(公告)号： US20100200949A1公开(公告)日： 2010-08-12
- 发明人: Roger A. Booth, JR. , Kangguo Cheng , Robert Hannon , Ravi M. Todi , Geng Wang
- 申请人： Roger A. Booth, JR. , Kangguo Cheng , Robert Hannon , Ravi M. Todi , Geng Wang
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L29/94
- IPC分类号： H01L29/94 ; H01L21/334
摘要：
A method of forming a deep trench capacitor includes providing a wafer. Devices are formed on a front side of the wafer. A through-silicon-via is formed on a substrate of the wafer. Deep trenches are formed on a back side of the wafer. A deep trench capacitor is formed in the deep trench. The through-silicon-via connects the deep trench capacitor to the devices.
信息查询
IPC分类:
