发明申请
- 专利标题： Multi-layered semiconductor apparatus
- 专利标题（中）： 多层半导体装置
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申请号： US12694008申请日： 2010-01-26
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公开(公告)号： US20100201432A1公开(公告)日： 2010-08-12
- 发明人: Isao Sugaya , Kazuya Okamoto
- 申请人： Isao Sugaya , Kazuya Okamoto
- 优先权： JP2007-196767 20070727; JP2007-325604 20071218
- 主分类号： G05F1/10
- IPC分类号： G05F1/10 ; H01L23/34
摘要：
Provided is a multi-layered semiconductor apparatus with improved heat diffusion and improved heat release. The multi-layered semiconductor apparatus (100) includes a plurality of layered semiconductor chips (20-1, 20-2) that each include at least one circuit region, and the circuit regions are arranged such that heat generated by the circuit regions as a result of the circuit regions being driven is spread out. The multi-layered semiconductor apparatus (100) further comprises a heat releasing section (50) that releases the heat generated by the circuit regions, and the circuit regions are arranged such that there is less thermal resistance between the heat releasing section and circuit regions that generate a greater amount of heat per unit area.
公开/授权文献
- US08299848B2 Multi-layered semiconductor apparatus 公开/授权日：2012-10-30
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