发明申请
- 专利标题： nvSRAM HAVING VARIABLE MAGNETIC RESISTORS
- 专利标题（中）： 具有可变磁阻电阻的nvSRAM
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申请号： US12370164申请日： 2009-02-12
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公开(公告)号： US20100202191A1公开(公告)日： 2010-08-12
- 发明人: Yongchul Ahn , Antoine Khoueir , Yong Lu , Hongyue Liu
- 申请人： Yongchul Ahn , Antoine Khoueir , Yong Lu , Hongyue Liu
- 申请人地址： US CA Scotts Valley
- 专利权人： SEAGATE TECHNOLOGY LLC
- 当前专利权人： SEAGATE TECHNOLOGY LLC
- 当前专利权人地址： US CA Scotts Valley
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; G11C11/14
摘要：
Non-volatile static random access memory (nvSRAM) that has a six transistor static random access memory (6T SRAM) cell electrically connected to a non-volatile random access memory (nvRAM) cell. The nvRAM cell has first and second variable magnetic resistors and first, second and third transistors.
公开/授权文献
- US08194438B2 nvSRAM having variable magnetic resistors 公开/授权日：2012-06-05
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