发明申请
US20100202480A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME 审中-公开
半导体发光元件及其制造方法

  • 专利标题: SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
  • 专利标题(中): 半导体发光元件及其制造方法
  • 申请号: US12499153
    申请日: 2009-07-08
  • 公开(公告)号: US20100202480A1
    公开(公告)日: 2010-08-12
  • 发明人: Kyosuke Kuramoto
  • 申请人: Kyosuke Kuramoto
  • 申请人地址: JP Tokyo
  • 专利权人: MITSUBISHI ELECTRIC CORPORATION
  • 当前专利权人: MITSUBISHI ELECTRIC CORPORATION
  • 当前专利权人地址: JP Tokyo
  • 优先权: JP2009-028406 20090210
  • 主分类号: H01S3/00
  • IPC分类号: H01S3/00
SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
摘要:
A semiconductor light-emitting element s includes a semiconductor substrate; a semiconductor laminate structure having a first conductivity-type cladding layer, an active layer, a second conductivity-type cladding layer, and a second conductivity-type contact layer sequentially arranged on the semiconductor substrate; a stripe-shaped waveguide region on an upper surface of the semiconductor laminate structure; and recessed portions on the upper surface, spaced from the waveguide region; a first electrode electrically connected to the semiconductor substrate; a second electrode electrically connected to the contact layer; a pad electrode on the second electrode; and an inner recessed portion electrode in the recessed portions, on an insulating film.
信息查询
0/0