发明申请
- 专利标题： finFET TRANSISTOR AND CIRCUIT
- 专利标题（中）： finFET晶体管和电路
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申请号： US12762427申请日： 2010-04-19
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公开(公告)号： US20100203689A1公开(公告)日： 2010-08-12
- 发明人: Kerry Bernstein , Edward J. Nowak , BethAnn Rainey
- 申请人： Kerry Bernstein , Edward J. Nowak , BethAnn Rainey
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A drive strength tunable FinFET, a method of drive strength tuning a FinFET, a drive strength ratio tuned FinFET circuit and a method of drive strength tuning a FinFET, wherein the FinFET has either at least one perpendicular and at least one angled fin or has at least one double-gated fin and one split-gated fin.
公开/授权文献
- US07964466B2 FinFET transistor and circuit 公开/授权日：2011-06-21