发明申请
- 专利标题： Semiconductor device and method of manufacturing semiconductor device
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12656728申请日： 2010-02-16
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公开(公告)号： US20100207093A1公开(公告)日： 2010-08-19
- 发明人: Naoya Inoue , Yoshihiro Hayashi , Kishou Kaneko
- 申请人： Naoya Inoue , Yoshihiro Hayashi , Kishou Kaneko
- 申请人地址： JP Kawasaki
- 专利权人： NEC ELECTRONICS CORPORATION
- 当前专利权人： NEC ELECTRONICS CORPORATION
- 当前专利权人地址： JP Kawasaki
- 优先权： JP34117/2009 20090217
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; H01L21/441
摘要：
Provided is a semiconductor device including a substrate, and a first wiring layer, a second wiring layer, and a switch via formed on the substrate. The first wiring layer has first wiring formed therein and the second wiring layer has second wiring formed therein. The switch via connects the first wiring and the second wiring. The switch via includes at least at its bottom a switch element including a resistance change layer. A resistance value of the resistance change layer changes according to a history of an electric field applied thereto.
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