发明申请
- 专利标题: Semiconductor devices and methods of forming the same
- 专利标题(中): 半导体器件及其形成方法
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申请号: US12658154申请日: 2010-02-03
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公开(公告)号: US20100207184A1公开(公告)日: 2010-08-19
- 发明人: Kihyun Kim , Hansoo Kim , Wonseok Cho , Jinho Kim , Jaehoon Jang , Byoungkeun Son
- 申请人: Kihyun Kim , Hansoo Kim , Wonseok Cho , Jinho Kim , Jaehoon Jang , Byoungkeun Son
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2009-0012497 20090216
- 主分类号: H01L29/78
- IPC分类号: H01L29/78
摘要:
A semiconductor device includes insulating patterns and gate patterns alternately stacked on a substrate; an active pattern on the substrate, which extends upward along sidewalls of the insulating patterns and the gate patterns; data storage patterns interposed between the gate patterns and the active pattern; and a source/drain region disposed in the active pattern between a pair of gate patterns adjacent to each other.