发明申请
- 专利标题: Semiconductor device and method of fabricating the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US12662590申请日: 2010-04-23
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公开(公告)号: US20100207188A1公开(公告)日: 2010-08-19
- 发明人: Nobutoshi Aoki , Hiroshi Akahori
- 申请人: Nobutoshi Aoki , Hiroshi Akahori
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 优先权: JP2006-261238 20060926
- 主分类号: H01L29/788
- IPC分类号: H01L29/788
摘要:
A semiconductor device according to an embodiment of the present invention includes: a semiconductor substrate; an isolation structure formed in a trench, formed in the semiconductor substrate, through a semiconductor oxide film; a floating gate formed on the semiconductor substrate between the isolation structures through an insulating film; a gate oxidation protection film formed on a side surface, on the isolation structure side, of the floating gate so that each of a part of a side surface and a bottom surface of the gate oxidation protection film contacts the insulating film; and a control gate formed on the floating gate through an inter-gate insulating film.