发明申请
US20100208398A1 ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT AND INTEFRATED CIRCUIT UTILIZING THE SAME
审中-公开
静电放电保护电路和使用它们的内置电路
- 专利标题: ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT AND INTEFRATED CIRCUIT UTILIZING THE SAME
- 专利标题(中): 静电放电保护电路和使用它们的内置电路
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申请号: US12371092申请日: 2009-02-13
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公开(公告)号: US20100208398A1公开(公告)日: 2010-08-19
- 发明人: Yeh-Ning Jou
- 申请人: Yeh-Ning Jou
- 申请人地址: TW Hsinchu
- 专利权人: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- 当前专利权人: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- 当前专利权人地址: TW Hsinchu
- 主分类号: H02H9/04
- IPC分类号: H02H9/04
摘要:
An ESD protection circuit coupled between a first power line and a second power line to avoid damage to an integrated circuit by an ESD event is disclosed. The ESD protection circuit includes a detection unit, a trigger unit, and a discharging unit. The detection unit asserts a detection signal when the ESD event occurs. The trigger unit asserts a first trigger signal and a second trigger signal when the detection is asserted. The discharging unit provides a discharge path to release an ESD current caused by the ESD event when the first and the second trigger signals are asserted.
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