Invention Application
- Patent Title: Methods of Forming Strontium Ruthenate Thin Films and Methods of Manufacturing Capacitors Including the Same
- Patent Title (中): 形成钌酸锶薄膜的方法和制造包括其的电容器的方法
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Application No.: US12708704Application Date: 2010-02-19
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Publication No.: US20100209595A1Publication Date: 2010-08-19
- Inventor: Oh-Seong Kwon , Kyu-Ho Cho , Jung-Hee Chung , Jin-Yong Kim , Wan-Don Kim , Youn-Soo Kim , Yong-Suk Tak
- Applicant: Oh-Seong Kwon , Kyu-Ho Cho , Jung-Hee Chung , Jin-Yong Kim , Wan-Don Kim , Youn-Soo Kim , Yong-Suk Tak
- Priority: KR10-2009-0013907 20090219
- Main IPC: B05D5/12
- IPC: B05D5/12 ; C23C16/00
Abstract:
In a method of forming a strontium ruthenate thin film using water vapor as an oxidizing agent, a strontium source and a ruthenium source are used. The strontium source includes a cyclopentadienyl (Cp) ligand, an alkoxide ligand, an alkyl ligand, an amide ligand or a halide ligand, and the ruthenium source includes a beta diketonate ligand.
Information query
