发明申请
- 专利标题: FACET EXTRACTION LED AND METHOD FOR MANUFACTURING THE SAME
- 专利标题(中): FACET提取LED及其制造方法
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申请号: US12704570申请日: 2010-02-12
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公开(公告)号: US20100210051A1公开(公告)日: 2010-08-19
- 发明人: Tae Won Lee , Hee Seok Park , Masayoshi Koike
- 申请人: Tae Won Lee , Hee Seok Park , Masayoshi Koike
- 申请人地址: KR Gyunggi-Do
- 专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人地址: KR Gyunggi-Do
- 优先权: KR10-2006-0015274 20060216
- 主分类号: H01L33/02
- IPC分类号: H01L33/02 ; H01L33/46
摘要:
A facet extraction LED improved in light extraction efficiency and a manufacturing method thereof. A substrate is provided. A light emitting part includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially stacked on the substrate. A p-electrode and an n-electrode are connected to the p-type semiconductor layer and the n-type semiconductor layer, respectively. The p- and n-electrodes are formed on the same side of the LED. The light emitting part is structured as a ring.
公开/授权文献
- US07998767B2 Method for manufacturing a facet extraction LED 公开/授权日:2011-08-16
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