发明申请
- 专利标题: METHOD OF SYNTHESIZING NANOWIRES
- 专利标题(中): 纳米合成方法
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申请号: US12560768申请日: 2009-09-16
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公开(公告)号: US20100213434A1公开(公告)日: 2010-08-26
- 发明人: Eun-kyung LEE , Dong-mok WHANG , Byoung-lyong CHOI , Byung-sung KIM
- 申请人: Eun-kyung LEE , Dong-mok WHANG , Byoung-lyong CHOI , Byung-sung KIM
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2009-0015872 20090225
- 主分类号: H01L29/16
- IPC分类号: H01L29/16 ; H01L21/205
摘要:
A method of synthesizing a nanowire. The method includes disposing a first oxide layer including germanium (Ge) on a substrate, forming a second oxide layer including a nucleus by annealing the first oxide layer, and growing a nanowire including Ge from the nucleus by a chemical vapor deposition (“CVD”) method.
公开/授权文献
- US08513101B2 Method of synthesizing nanowires 公开/授权日:2013-08-20
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