发明申请
- 专利标题： NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME
- 专利标题（中）： 非易失性存储器件及其操作方法
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申请号： US12647576申请日： 2009-12-28
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公开(公告)号： US20100214853A1公开(公告)日： 2010-08-26
- 发明人: Tai Kyu Kang
- 申请人： Tai Kyu Kang
- 优先权： KR10-2009-0016319 20090226
- 主分类号： G11C7/06
- IPC分类号： G11C7/06 ; G11C5/14
摘要：
A nonvolatile memory device includes a control unit configured to measure a threshold voltage distribution of each of selected pages between a start voltage and an end voltage by performing a read operation on each page in response to a command set for analyzing the threshold voltage distribution, to compare the measured threshold voltage distribution with a reference threshold voltage distribution, and to determine a read voltage having a least amount of errors upon the read operation being performed.
公开/授权文献
- US08576621B2 Nonvolatile memory device and method of operating the same 公开/授权日：2013-11-05
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