发明申请
- 专利标题： Method for Forming Porous Insulating Film and Semiconductor Device
- 专利标题（中）： 多孔绝缘膜和半导体器件的形成方法
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申请号： US11991745申请日： 2006-09-08
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公开(公告)号： US20100219512A1公开(公告)日： 2010-09-02
- 发明人: Munehiro Tada , Naoya Furutake , Tsuneo Takeuchi , Yoshihiro Hayashi
- 申请人： Munehiro Tada , Naoya Furutake , Tsuneo Takeuchi , Yoshihiro Hayashi
- 申请人地址： JP TOKYO
- 专利权人： NEC COPORATION
- 当前专利权人： NEC COPORATION
- 当前专利权人地址： JP TOKYO
- 优先权： JP2005-264619 20050913
- 国际申请： PCT/JP2006/317819 WO 20060908
- 主分类号： H01L23/29
- IPC分类号： H01L23/29 ; H01L21/47
摘要：
A method for forming porous insulating film using cyclic siloxane raw material monomer is provided, which method suppresses detachment of hydrocarbon and is able to form a low-density film.In a method where at least cyclic organosiloxane raw material 101 is supplied to a reaction chamber and an insulating film is formed by plasma vapor deposition method, above-mentioned problem is solved by a method for a forming porous insulating film using the mixed gas of a cyclic organosiloxane raw material 101 and a compound raw material 103 including a part of chemical structure comprising the cyclic organosiloxane raw material 101. The compound raw material 103 is preferably a compound including a part of side chain of the cyclic organosiloxane raw material 101.