发明申请
US20100219785A1 POWER SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING POWER SEMICONDUCTOR DEVICE, AND MOTOR DRIVE APPARATUS
有权
功率半导体器件，制造功率半导体器件的方法和电动机驱动装置
- 专利标题： POWER SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING POWER SEMICONDUCTOR DEVICE, AND MOTOR DRIVE APPARATUS
- 专利标题（中）： 功率半导体器件，制造功率半导体器件的方法和电动机驱动装置
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申请号： US12599192申请日： 2008-06-11
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公开(公告)号： US20100219785A1公开(公告)日： 2010-09-02
- 发明人: Satoshi Hirose , Daigo Kikuta
- 申请人： Satoshi Hirose , Daigo Kikuta
- 申请人地址： JP Toyota-shi, Aichi-ken
- 专利权人： TOYOTA JIDOSHA KABUSHIKI KAISHA
- 当前专利权人： TOYOTA JIDOSHA KABUSHIKI KAISHA
- 当前专利权人地址： JP Toyota-shi, Aichi-ken
- 优先权： JP2007-155454 20070612
- 国际申请： PCT/JP2008/061082 WO 20080611
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L21/331 ; H02P27/06
摘要：
An inverter for driving a motor includes a plurality of power semiconductor devices. The plurality of power semiconductor devices include a resistance electrically connected between a collector and an emitter of an IGBT element. Each of the power semiconductor devices forms any one of a U-phase arm, a V-phase arm and a W-phase arm of the inverter. As a result, a discharge resistance is built in the inverter, and therefore, it is not required to prepare the discharge resistance separately. Thus, the number of components required for a motor drive apparatus can be decreased and the number of operation steps can be reduced.
公开/授权文献
- US08324691B2 Power semiconductor device 公开/授权日：2012-12-04
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