发明申请
- 专利标题： FIELD EFFECT TRANSISTOR
- 专利标题（中）： 场效应晶体管
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申请号： US12295004申请日： 2007-03-29
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公开(公告)号： US20100224910A1公开(公告)日： 2010-09-09
- 发明人: Yuji Ando , Hironobu Miyamoto , Tatsuo Nakayama , Yasuhiro Okamoto , Takashi Inoue , Yasuhiro Murase , Kazuki Ota , Akio Wakejima , Naotaka Kuroda
- 申请人： Yuji Ando , Hironobu Miyamoto , Tatsuo Nakayama , Yasuhiro Okamoto , Takashi Inoue , Yasuhiro Murase , Kazuki Ota , Akio Wakejima , Naotaka Kuroda
- 申请人地址： JP Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP2006-091969 20060329
- 国际申请： PCT/JP2007/000332 WO 20070329
- 主分类号： H01L29/80
- IPC分类号： H01L29/80
摘要：
Disclosed is an HJFET 110 which comprises: a channel layer 12 composed of InyGa1-yN (0≦y≦1); a carrier supply layer 13 composed of AlxGa1-xN (0≦x≦1), the carrier supply layer 13 being provided over the channel layer 12 and including at least one p-type layer; and a source electrode 15S, a drain electrode 15D and a gate electrode 17 which are disposed facing the channel layer 12 through the p-type layer, and provided over the carrier supply layer 13. The following relational expression is satisfied: 5.6×1011x
公开/授权文献
- US08198652B2 Field effect transistor with reduced gate leakage current 公开/授权日：2012-06-12
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