发明申请
US20100232074A1 Magnetoresistive effect element and magnetic disk device 有权
磁阻效应元件和磁盘装置

Magnetoresistive effect element and magnetic disk device
摘要:
A magnetoresistive effect element is structured in the manner that the antiferromagnetic layer interposed between the upper and lower shields is eliminated and the antiferromagnetic layer is positioned in a so-called shield layer. Therefore, it is realized to solve a pin reversal problem and to allow narrower tracks and narrower read gaps.
公开/授权文献
信息查询
0/0