发明申请
US20100233634A1 Processing Liquid for Resist Substrate and Method of Processing Resist Substrate Using the Same
有权
用于抗蚀剂基板的处理液和使用其的抗蚀基板的处理方法
- 专利标题： Processing Liquid for Resist Substrate and Method of Processing Resist Substrate Using the Same
- 专利标题（中）： 用于抗蚀剂基板的处理液和使用其的抗蚀基板的处理方法
-
申请号： US12223310申请日： 2007-02-13
-
公开(公告)号： US20100233634A1公开(公告)日： 2010-09-16
- 发明人: Go Noya , Masakazu Kobayashi , Ryuta Shimazaki
- 申请人： Go Noya , Masakazu Kobayashi , Ryuta Shimazaki
- 优先权： JP2006-036932 20060214
- 国际申请： PCT/JP2007/052485 WO 20070213
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; G03F7/32
摘要：
The present invention provides a resist substrate treating solution and a method for pattern formation using that treating solution, and thereby problems such as foreign substances on the substrate surface, pattern collapse and pattern roughness can be easily solved at the same time. The treating solution comprises water and an alkylene oxide adduct of a primary amine having a hydrocarbon group of 11 to 30 carbon atoms or of ammonia. The method for pattern formation according to the invention comprises a step of treating the developed pattern with that treating solution.
公开/授权文献
信息查询
IPC分类:
