发明申请
US20100233874A1 METHOD FOR FORMING FUNCTIONAL ELEMENT USING METAL-TO-INSULATOR TRANSITION MATERIAL, FUNCTIONAL ELEMENT FORMED BY METHOD, METHOD FOR PRODUCING FUNCTIONAL DEVICE, AND FUNCTIONAL DEVICE PRODUCED BY METHOD
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使用金属到绝缘体过渡材料形成功能元件的方法，通过方法形成的功能元件，用于制造功能器件的方法和由方法生产的功能器件
- 专利标题： METHOD FOR FORMING FUNCTIONAL ELEMENT USING METAL-TO-INSULATOR TRANSITION MATERIAL, FUNCTIONAL ELEMENT FORMED BY METHOD, METHOD FOR PRODUCING FUNCTIONAL DEVICE, AND FUNCTIONAL DEVICE PRODUCED BY METHOD
- 专利标题（中）： 使用金属到绝缘体过渡材料形成功能元件的方法，通过方法形成的功能元件，用于制造功能器件的方法和由方法生产的功能器件
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申请号： US12720220申请日： 2010-03-09
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公开(公告)号： US20100233874A1公开(公告)日： 2010-09-16
- 发明人: Daisuke Ito
- 申请人： Daisuke Ito
- 申请人地址： JP Tokyo
- 专利权人： SONY CORPORATION
- 当前专利权人： SONY CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-062759 20090316
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
A method for forming a functional element includes a first step of forming an insulating layer composed of an insulator phase of a transition metal oxide serving as a metal-to-insulator transition material, the transition metal oxide being mainly composed of vanadium dioxide, and a second step of causing part of the insulating layer to transition to a metallic phase, in which the insulator phase differs from the metallic phase in terms of electrical resistivity and/or light transmittance.
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