发明申请
- 专利标题： PHOTODIODE CELL STRUCTURE OF PHOTODIODE INTEGRATED CIRCUIT FOR OPTICAL PICKUP AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 用于光学拾取的光电聚合电路的光电池结构及其制造方法
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申请号： US12464837申请日： 2009-05-12
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公开(公告)号： US20100244177A1公开(公告)日： 2010-09-30
- 发明人: Ha Woong Jeong , Kyoung Soo Kwon , Chae Dong Go , Deuk Hee Park
- 申请人： Ha Woong Jeong , Kyoung Soo Kwon , Chae Dong Go , Deuk Hee Park
- 优先权： KR10-2009-0026412 20090327
- 主分类号： H01L31/103
- IPC分类号： H01L31/103 ; H01L21/20
摘要：
Disclosed herein is a photodiode cell, including: a first-type substrate; a second-type epitaxial layer disposed on the first-type substrate; heavily-doped second-type layers, each having a small depth, formed on the second-type epitaxial layer; and heavily-doped first-type layers, each having a narrow and shallow section, disposed on the second-type epitaxial layer and formed between the heavily-doped second-type layers, wherein the first-type and second-type have opposite doped states.
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