发明申请
US20100244196A1 Group III nitride semiconductor composite substrate, group III nitride semiconductor substrate, and group III nitride semiconductor composite substrate manufacturing method
审中-公开
III族氮化物半导体复合衬底，III族氮化物半导体衬底和III族氮化物半导体复合衬底制造方法
- 专利标题： Group III nitride semiconductor composite substrate, group III nitride semiconductor substrate, and group III nitride semiconductor composite substrate manufacturing method
- 专利标题（中）： III族氮化物半导体复合衬底，III族氮化物半导体衬底和III族氮化物半导体复合衬底制造方法
-
申请号： US12458209申请日： 2009-07-02
-
公开(公告)号： US20100244196A1公开(公告)日： 2010-09-30
- 发明人: Takehiro Yoshida
- 申请人： Takehiro Yoshida
- 申请人地址： JP Tokyo
- 专利权人： Hitachi Cable, Ltd.
- 当前专利权人： Hitachi Cable, Ltd.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-081337 20090330
- 主分类号： H01L29/20
- IPC分类号： H01L29/20 ; H01L21/18
摘要：
A group III nitride semiconductor composite substrate includes a substrate composed of a conductive material having a melting point of not less than 100° C., a group III nitride layer provided on the substrate, and a group III nitride single crystal film provided on the group III nitride layer. The group III nitride layer includes an undulation including a periodic roughness in a surface of the group III nitride layer contacted with the group III nitride single crystal film. The undulation includes a 1-dimensional power spectral density of less than 500 nm3 in the spatial wavelength region of not less than 0.1 (/μm) and less than 1 (/μm).
信息查询
IPC分类:
