发明申请
- 专利标题: INTEGRATED CIRCUIT CHIP USING TOP POST-PASSIVATION TECHNOLOGY AND BOTTOM STRUCTURE TECHNOLOGY
- 专利标题(中): 使用顶尖后置技术和底部结构技术的集成电路芯片
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申请号: US12722483申请日: 2010-03-11
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公开(公告)号: US20100246152A1公开(公告)日: 2010-09-30
- 发明人: Mou-Shiung Lin , Jin-Yuan Lee , Hsin-Jung Lo , Ping-Jung Yang , Te-Sheng Liu
- 申请人: Mou-Shiung Lin , Jin-Yuan Lee , Hsin-Jung Lo , Ping-Jung Yang , Te-Sheng Liu
- 申请人地址: TW Hsin-Chu
- 专利权人: Megica Corporation
- 当前专利权人: Megica Corporation
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: H05K7/00
- IPC分类号: H05K7/00
摘要:
Integrated circuit chips and chip packages are disclosed that include an over-passivation scheme at a top of the integrated circuit chip and a bottom scheme at a bottom of the integrated circuit chip using a top post-passivation technology and a bottom structure technology. The integrated circuit chips can be connected to an external circuit or structure, such as ball-grid-array (BGA) substrate, printed circuit board, semiconductor chip, metal substrate, glass substrate or ceramic substrate, through the over-passivation scheme or the bottom scheme. Related fabrication techniques are described.
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