发明申请
US20100246152A1 INTEGRATED CIRCUIT CHIP USING TOP POST-PASSIVATION TECHNOLOGY AND BOTTOM STRUCTURE TECHNOLOGY 有权
使用顶尖后置技术和底部结构技术的集成电路芯片

INTEGRATED CIRCUIT CHIP USING TOP POST-PASSIVATION TECHNOLOGY AND BOTTOM STRUCTURE TECHNOLOGY
摘要:
Integrated circuit chips and chip packages are disclosed that include an over-passivation scheme at a top of the integrated circuit chip and a bottom scheme at a bottom of the integrated circuit chip using a top post-passivation technology and a bottom structure technology. The integrated circuit chips can be connected to an external circuit or structure, such as ball-grid-array (BGA) substrate, printed circuit board, semiconductor chip, metal substrate, glass substrate or ceramic substrate, through the over-passivation scheme or the bottom scheme. Related fabrication techniques are described.
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