发明申请
US20100246298A1 INTEGRATED CIRCUIT MEMORY HAVING ASSISTED ACCESS AND METHOD THEREFOR
有权
具有辅助访问的集成电路存储器及其方法
- 专利标题: INTEGRATED CIRCUIT MEMORY HAVING ASSISTED ACCESS AND METHOD THEREFOR
- 专利标题(中): 具有辅助访问的集成电路存储器及其方法
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申请号: US12414761申请日: 2009-03-31
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公开(公告)号: US20100246298A1公开(公告)日: 2010-09-30
- 发明人: Shayan Zhang , Troy L. Cooper , Jack M. Higman , Prashant U. Kenkare , Andrew C. Russell
- 申请人: Shayan Zhang , Troy L. Cooper , Jack M. Higman , Prashant U. Kenkare , Andrew C. Russell
- 主分类号: G11C29/00
- IPC分类号: G11C29/00 ; G11C5/14
摘要:
A memory and method for access the memory are provided. A first test is used to test memory elements to determine a lowest power supply voltage at which all the memory elements will operate to determine a weak memory element. Redundancy is used to substitute a redundant memory element for the weak memory element. The weak memory element is designated as a test element. In response to receiving a request to change a power supply voltage provided to the memory elements, a second test is used to test the test element to determine if the test element will function correctly at a new power supply voltage. If the test element passes the second test, the memory elements are accessed at the new power supply voltage. If the test element fails the second test, the memory elements are accessed using an access assist operation.
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